Interposer including at least one passive element at least partially defined by a recess formed therein, system including same, and wafer-scale interposer

ABSTRACT

An interposer for assembly with a semiconductor die and methods of manufacture are disclosed. The interposer may include at least one passive element at least partially defined by at least one recess formed in at least one dielectric layer of the interposer. The at least one recess may have dimensions selected for forming the passive element with an intended magnitude of at least one electrical property. At least one recess may be formed by removing at least a portion of at least one dielectric layer of an interposer. The at least one recess may be at least partially filled with a conductive material. For instance, moving, by way of squeegee, or injection of a conductive material at least partially within the at least one recess, is disclosed. Optionally, vibration of the conductive material may be employed. A wafer-scale interposer and a system including at least one interposer are disclosed.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of application Ser. No. 10/923,437,filed Aug. 19, 2004, now U.S. Pat. No. 7,494,889, issued Feb. 24, 2009.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to semiconductor devices and components.Particularly, the present invention relates to forming passive elements,such as inductors, resistors, and capacitors, wherein the passiveelements have relatively precise electrical properties.

2. Background of Related Art

Conventional screen-printed resistors, which may be termed “thick-film”resistors, are employed in hybrid electronic circuits to provide a widerange of electrical resistance values. Conventional screen-printingprocesses are used to deposit conductive paste or ink upon a surface ofa substrate, such as a substrate comprising FR-4, flexible circuit,ceramic, or silicon. Screen-printing pastes used with ceramic printedwire boards may typically include a glass frit composition, anelectrically conductive material, various additives for favorablyaffecting the electrical properties of the resistor, and an organicvehicle or polymer matrix material. Screen-printing pastes used inorganic printed wire board construction typically include anelectrically conductive material, various additives for favorablyaffecting the electrical properties of the resistor, an organic binder,and an organic vehicle. After printing, the screen-printing paste may betypically heated to dry the paste and convert the paste into a suitablefilm that adheres to the substrate. If a polymer screen-printing pasteis used, the heating step may remove the organic vehicle and cure thepolymer matrix material. Other screen-printing pastes may be preferablysintered, or fired, during which the paste is heated to burn off theorganic vehicle and fuse the remaining solid material.

The electrical resistance of a screen-printed resistor may be dependent,at least partially, on the precision with which the dimensions of theresistor are produced, the stability of the resistor material, and thestability of the resistor terminations. Accuracy in forming of at leastone dimension (e.g., a width, length or thickness) of a screen-printedresistor may be particularly challenging in view of the conventionaltechniques employed, as well as the dimensional instability that mayoccur during subsequent processing.

Initially, for rectangular screen-printed resistors, the width andthickness are determined by the screen-printing process, and the lengthis determined by the termination pattern. More particularly,conventional screen-printing techniques generally employ a template withapertures bearing the positive image of the resistor to be created. Thetemplate, referred to as a mask or stencil, may be placed proximate toand above the surface of the substrate on which the resistor is to beformed. The stencil may then be loaded with the conductive paste, and aso-called squeegee blade may be drawn across the surface of the mask,pressing the paste through the apertures of the stencil and onto thesurface of the substrate.

However, even if the dimensions of a conventional screen-printed passiveelement are reasonably well controlled upon initially depositing thepaste upon the surface of a substrate, the control of dimensions may beinfluenced by dimensional changes that occur after deposition (i.e.,during drying, firing, or both drying and firing). Of course, suchdimensional changes may be difficult to predict or control and mayadversely influence the variability in the electrical properties of ascreen-printed passive element. Thus, as mentioned above, compared tomany other deposition processes, conventional screen printing is arelatively imprecise process with respect to dimensional tolerances.Accordingly, since the resistance of a screen-printed resistor isrelated directly to its dimensions, the resistance of a screen-printedresistor or another electrical component may be, correspondingly,relatively imprecise.

For instance, screen-printed resistors may exhibit dimensionaltolerances of about ±100 μm. Correspondingly, screen-printed resistorsmay be typically limited to dimensions of larger than about one squaremillimeter, since the resistance of a screen-printed resistor of aboutone square millimeter may generally vary by about 20% to 30% if formedby screen printing, due, in large part, to the variability of itslength, width, and thickness. Accordingly, screen-printed resistorswhich exhibit adequate tolerances in resistance may require the physicalsize of the resistor to be larger than would otherwise be desirable.Thus, variability with respect to the electrical properties (i.e.,resistance) of less than ±20% may be difficult to achieve byconventional screen-printing methods for passive elements having an areaof less than about one square millimeter.

For this reason, laser trimming is widely used to adjust the resistanceof screen-printed resistors. Laser trimming processes typically involveablation of a portion of the screen-printed resistor, which increasesthe electrical resistance thereof. However, laser trimming may be costprohibitive and may require additional processing time. Also, theresistor must generally be exposed at a surface thereof to allow forlaser trimming. As another consideration, resistors which haveresistances which exceed a desired magnitude may not be adjusted vialaser trimming techniques.

Thus, considering the conventional processes and limitations thereof,undesirably, resistors or other passive electrical components formed onthe surface of a substrate via conventional screen-printing processesmay occupy a relatively large area on the surface thereof. Limiting theavailable area may detrimentally influence placement of other circuitcomponents, which may require surface mounting. Therefore, conventionalformation of passive elements on the surface of a substrate may be animpediment to design flexibility.

A number of approaches for increasing the accuracy of screen-printedresistors have been developed. For instance, U.S. Pat. Nos. 6,229,098and 6,171,921 to Dunn et al. each disclose a process for forming ascreen-printed resistor with relatively precisely controlled dimensions,thus yielding a relatively precise resistance value. More particularly,U.S. Pat. Nos. 6,229,098 and 6,171,921 to Dunn et al. each disclose thatan opening may be photodefined in the surface of a photoimageable layerand then filled via screen printing with resistive material. However,photoimaging processes may be costly, time consuming, or both.

From the above, it can be seen that conventional processes and practiceswith respect to the fabrication of screen-printed resistors and otherpassive electrical elements may necessitate a compromise between theprecision of the resistance value and the size of the resistor. In otherwords, while smaller resistors are often preferred to yield a morecompact circuit, an undesirable consequence is that resistance valuesare less predictable due to the dimensional variability thereof.Accordingly, a need exists for a method for producing passive elementsthat overcomes some of the difficulties associated with conventionallyformed passive elements.

BRIEF SUMMARY OF THE INVENTION

The present invention relates to an interposer for assembly with asemiconductor die including at least one passive element, the at leastone passive element having relatively precise dimensions, which aredefined, at least in part, by at least one recess formed in a dielectriclayer of the interposer. The dielectric layer may be substantially freeof photopolymer. Generally, the at least one recess in the interposermay be formed by removing a portion thereof, by, for instance, laserablation, drilling, milling, punching, or etching. Furthermore, the atleast one recess may be at least partially filled with a conductivematerial, such as, for instance, a conductive paste to form the at leastone passive element. The conductive paste may be at least partiallycured, dried, or both to form a relatively stable electrical element.

In one aspect of the present invention, a method for forming asemiconductor die interposer is disclosed, the interposer including atleast one passive element. More specifically, a substrate may beprovided, the substrate including at least one dielectric layer and atleast one electrically conductive layer at least partially superimposedtherewith. Further, at least one recess may be formed at least partiallywithin the at least one dielectric layer by removing a portion thereof.Also, the dimensions of the at least one recess may be selected forcausing an at least one passive element to exhibit an intended magnitudeof at least one electrical property. Conductive material may bedeposited at least partially within the at least one recess to form theat least one passive element. At least one conductive trace may beformed to electrically communicate with the at least one passiveelement. An interposer of the present invention may be assembled with asemiconductor die and encapsulated to form a semiconductor package.

In another aspect of the present invention, an interposer for assemblywith a semiconductor die may include at least one dielectric layer andat least one passive element disposed at least partially within at leastone recess formed in the at least one dielectric layer. In addition, thedimensions of the at least one recess may be selected for forming apassive element exhibiting an intended magnitude of at least oneelectrical property. The interposer may include at least one conductivelayer extending in a superimposed relationship along at least a portionof a surface of the at least one dielectric layer.

A wafer-scale interposer is also disclosed, including a plurality ofinterposers, each comprising a substrate, including at least onedielectric layer and at least one conductive layer. At least one recessmay be formed in the at least one dielectric layer of each of theplurality of interposers. Further, each of the plurality of interposersmay include at least one passive element positioned at least partiallywithin the at least one recess formed in the at least one dielectriclayer thereof, respectively. Also, the dimensions of the at least onerecess may be selected for producing an intended magnitude of at leastone electrical property of the at least one passive element positionedat least partially therein during operation thereof. The wafer-scaleinterposer may be assembled with a wafer comprising a plurality ofsemiconductor dice and subsequently singulated and encapsulated to formindividual semiconductor packages. Alternatively, the wafer-scaleinterposer may be assembled with a plurality of individual semiconductordie and subsequently singulated and encapsulated to form individualsemiconductor packages.

A system including an interposer of the present invention is alsodisclosed. The system may comprise an electronic device, such as acomputing device. Further, the system may include at least one inputdevice (e.g., mouse, push-button, touch screen, communication interface,hard drive, etc.) and at least one output device (e.g., a display,printer, communication interface, bard drive, etc.). The system may beutilized in various computing environments, systems, and devices, suchas, for example, cell phones, personal data assistants (PDAs), and othersimilar electronic devices.

Other features and advantages of the present invention will becomeapparent to those of skill in the art through consideration of theensuing description, the accompanying drawings, and the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side cross-sectional view of a schematic representation of asemiconductor die assembly of the present invention;

FIG. 2A is a side cross-sectional view of an interposer of the presentinvention;

FIG. 2B is a side cross-sectional view of the interposer shown in FIG.2A including a recess formed therein;

FIG. 2C is a side cross-sectional view of the interposer shown in FIG.2A including a recess formed therein by way of etching;

FIG. 2D is a side cross-sectional view of the interposer shown in FIG.2A including a recess formed therein by way of laser ablation;

FIG. 2E is a side cross-sectional view of the interposer shown in FIG.2A including a recess formed therein by way of machining;

FIG. 2F is a top elevation view of an interposer of the presentinvention including a recess formed therein;

FIG. 2G is a side cross-sectional view of an interposer of the presentinvention including a recess formed therein having differently shapedregions;

FIG. 3A is a side cross-sectional schematic view of a screen-printingprocess according to the present invention;

FIG. 3B is a side cross-sectional schematic view of a screen-printingprocess according to the present invention;

FIG. 3C is a side cross-sectional schematic view of a screen-printingprocess according to the present invention;

FIG. 3D is a side cross-sectional schematic view of a screen-printingprocess according to the present invention;

FIG. 3E is a side cross-sectional schematic view of a screen-printingprocess according to the present invention;

FIG. 3F is a side cross-sectional schematic view of a screen-printingprocess according to the present invention;

FIG. 3G is a side cross-sectional schematic view of a screen-printingprocess according to the present invention;

FIG. 3H is a side cross-sectional schematic view of an injection processaccording to the present invention;

FIG. 3I is a side cross-sectional schematic view of an injection processaccording to the present invention;

FIG. 3J is a side cross-sectional view of an interposer of the presentinvention including a passive element comprising a plurality ofconductive layers;

FIG. 4A shows a side cross-sectional view of an interposer including apassive element of the present invention;

FIG. 4B shows a side cross-sectional view of an interposer including twoadjacent passive elements of the present invention;

FIG. 4C shows a side cross-sectional view of an interposer including apassive element of the present invention;

FIG. 4D shows a side cross-sectional view of an interposer including apassive element of the present invention;

FIG. 4E shows a side cross-sectional view of an interposer including apassive element of the present invention;

FIG. 5A is a side cross-sectional view of an interposer including aninductor according to the present invention;

FIG. 5B is a top elevation view of the inductor shown in FIG. 5A;

FIG. 5C is a side cross-sectional view of an interposer according to thepresent invention including more than one dielectric layer;

FIG. 5D is a top view of a multilayer interposer according to thepresent invention;

FIG. 5E is a side schematic view of the multilayer interposer shown inFIG. 5D;

FIG. 6A is a perspective view of a wafer-scale interposer according tothe present invention and a semiconductor wafer assembly;

FIG. 6B is a top elevation view of a wafer-scale interposer according tothe present invention including singulated semiconductor dice disposedthereon; and

FIG. 7 is a block diagram of a system according to the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

Generally, the present invention contemplates methods of manufacture ofan interposer for use in semiconductor device assemblies, packages, andassemblies and packages including multi-chip modules. In one aspect ofthe present invention, a method of manufacturing an interposer includingat least one passive element is disclosed.

In the following detailed description, reference is made to theaccompanying drawings hereof, which illustrate specific embodiments inaccordance with the present invention. It should be understood thatother embodiments may be utilized, and that various structural, process,or structural and process changes may be made to the describedembodiments of the present invention without departing from the spiritand scope thereof. In addition, for clarity, like numerals are used torefer to like elements and functions in the various figures of thedrawings and for illustrating the different embodiments of the presentinvention. For instance, while the following drawings and discussionrelate to interposer and semiconductor device configurations termed“flip-chip,” as known in the art, the present invention may includeother rigid or flexible interposer configurations, without limitation.

In addition, reference is made herein to screen-printing methods andmaterials. “Screen-printing,” as used herein, refers generally to amethod of physically depositing a paste or ink upon a surface or withina recess as described in greater detail herein and also encompassesso-called “thick-film” processes and materials as known in the art. Inaddition, while conventional screen-printing processes usually employmovement of a squeegee or blade member across a surface of a stencil,the term “screen-printing,” as used herein, also refers generally toprocesses wherein a conductive paste is deposited at least partiallywithin a recess by movement of the squeegee or blade member across asurface into which the recess is formed (i.e., without a stencil).

A semiconductor device package 10 in accordance with the presentinvention is illustrated in FIG. 1. Semiconductor device package 10 mayinclude interposer 30 and semiconductor die 12, wherein semiconductordie 12 is encapsulated within encapsulant 16. To facilitate integrationand electrical communication of active and passive elements ofsemiconductor device package 10, the interposer 30 may include at leastone conductive via (not shown), conductive layer (not shown), ordielectric layer (not shown), as known in the art, that electricallyconnect solder balls 50 disposed on the lower surface 34 thereof toregions of the upper surface 32 thereof that correspond to solder bumps18.

Interposer 30 may be formed from either a rigid or flexible material andmay be substantially planar. Silicon or another semiconductor material(e.g., gallium arsenide, indium phosphide, etc.) may comprise at least aportion of interposer 30 and interposer 30 may further comprise adielectric material (e.g., a silicon oxide or silicon nitride) toprevent electrical shorting of the conductive structures thereof. Thedielectric material comprising the interposer 30, or at least one layeror portion thereof, may be substantially free of photopolymer. Suitablematerials for forming the interposer 30 may include, without limitation,FR-4 board, glass, plastic, ceramics, and polyimide. Accordingly, theinterposer 30 may comprise a so-called “rigid” or “flex” interposerstructure, without limitation. In addition, interposer 30 may include aflex-circuit (e.g., tape automated bonding) interconnection throughwhich a semiconductor die 12 may be connected to interposer 30.

According to the present invention, the interposer 30 may include atleast one passive element 40. For example, the at least one passiveelement 40 may comprise an inductor, a resistor, or a capacitor. Inaddition, the passive element 40 may be formed at least partially withina dielectric layer of the interposer 30, as described in further detailhereinbelow.

The at least one passive element 40 may be separated from the uppersurface 32 by a barrier layer (not shown) thereof. Though described asinductors, resistors, or capacitors, a passive element 40 of the presentinvention may be any device which exhibits an electrical propertyindependent of an external power source. As known in the art, passiveelement 40 of interposer 30 may be interconnected to semiconductor die12 by conductive traces (not shown) formed upon the upper surface 32 ofinterposer 30.

As shown in FIG. 1, the semiconductor die 12 may be preferably flip-chipmounted onto interposer 30 through solder bumps 18, which connect toassociated conductive traces (not shown) of the interposer 30. As shownin FIG. 1, the stand-off gap between the semiconductor die 12 and theinterposer 30 may be filled with an underfill material 14. The underfillmaterial 14 may provide for passivation and may enhance the fatiguecharacteristics of the solder bumps 18, which connect the semiconductordie 12 to the interposer 30.

Alternatively, the interposer 30 and semiconductor die 12 may beconfigured with at least one wire bond extending therebetween, as knownin the art. As mentioned above, the present invention is not limited toan interposer configuration suited for flip-chip style electricalmounting; rather, the present invention contemplates an interposer foruse with a semiconductor die in any configuration as known in the art.

Further, a dielectric layer may be formed on one or both sides of theinterposer 30 and may provide an effective electrical insulation betweenthe at least one passive element 40, (e.g., an inductor, a capacitor, ora resistor) and other electrically conductive members thereof. Such adielectric layer may inhibit performance degradation of the at least onepassive element 40, by reducing loss caused by the inherent conductanceof the interposer 30. For instance, a silicon oxide (SiO) layer may beformed on one or both sides of the interposer 30.

Of course, at least one passive element 40 of the present invention maybe disposed entirely within (i.e., not at least partially exposed at asurface of the interposer 30) the interposer 30 as shown in FIG. 1. Insuch a configuration, the interposer 30 may include at least oneconductive via (not shown), a conductive layer (not shown), as known inthe art, for electrically connecting the at least one passive element 40to solder balls 50 disposed on the lower surface 34 thereof, and regionsof the upper surface 32 thereof that correspond to solder bumps 18, orboth.

The process for forming an interposer 230 according to the presentinvention and including at least one passive element 40 will next bedescribed with reference to FIGS. 2A-2F. FIG. 2A shows an interposer 230of the present invention including dielectric layer 232 and conductivelayer 234. Dielectric layer 232 may preferably comprise a dielectriclayer, such as polyimide, while conductive layer 234 may preferablycomprise a metal, such as copper. In further detail, interposer 230 maybe flexible or may be rigid, as known in the art. Further, although theinterposer 230 as shown in FIG. 2A includes one conductive layer 234,the present invention contemplates that interposer 230 of the presentinvention may include one or more conductive layers, as described infurther detail hereinbelow. Further, interposer 230 may comprise one ormore so-called prepreg films, which generally refer to a film(conductive or non-conductive) that is pre-manufactured and which may beused to form one or more “layers” of the interposer 230. Of course, aprepreg film may be adhered or otherwise affixed to another layer of theinterposer 230.

As shown in FIG. 2B, recess 160 may be formed within interposer 230, atleast within a portion of dielectric layer 232, but may extend toconductive layer 234 or partially thereinto, without limitation. Recess160 may be formed for accepting a material deposited therein by removingat least a portion of the dielectric layer 232. Further, the dimensionsof the recess 160 may be selected for forming a passive element whichexhibits an intended or anticipated magnitude of at least one electricalproperty (e.g., electrical resistance).

For instance, theoretically, the electrical resistance of a resistor maybe calculated by the equation:

$R = {\Omega\frac{L}{Wt}}$

Wherein:

R is the electrical resistance;

L is the length of the resistor;

W is the width of the resistor;

t is the thickness of the resistor;

Ω is the electrical resistance value of the paste per unit area thereof;

L is substantially aligned with the direction of current flow throughthe resistor; and

t and W are substantially transverse to the direction of current flowthrough the resistor.

Therefore, if the variability of the dimensions of a screen-printed orthick-film resistor may be limited or reduced, the variability of theelectrical resistance of a passive element so formed may be reducedaccordingly. More generally, by reducing the variability of thedimensions of a passive element, the variability of an electricalproperty thereof may be reduced correspondingly. Particularly,deposition of an electrically conductive material at least partiallywithin a recess formed in an interposer may reduce the variability inthe dimensions of a passive element so formed. Additionally, forming aboundary which limits the location of a passive element may allow forimproved design flexibility. For instance, as described hereinabove,since conventionally formed screen-printed or thick-film passiveelements may exhibit variability in their dimensions upon beingdeposited and may slump or deform in response to drying or firing, suchdimensional inaccuracies may require that electrically separateconventionally screen-printed components are physically separated by atleast about 100 μm. As described hereinbelow in further detail, by themethods of the present invention, adjacent passive elements may bepositioned more closely in relation to one another.

Referring now to FIGS. 2C-2F, recess 160 may be formed within interposer230 through a variety of techniques, as described below.

For instance, recess 160 may be formed by removing at least a portion ofthe dielectric layer 232 via an etching process. Generally, the presentinvention contemplates that etching processes as known in the art may beemployed, such as, for instance, wet etching, dry etching, anisotropicetching, or isotropic etching. More specifically, by way of example andnot by limitation, plasma etching, ion beam etching, ion beam milling,reactive ion beam etching, chemical dry etching, chemical etching in aplasma, chemical-physical etching, or chemical wet etching may beemployed for forming recess 160. Of course, the etching process andmaterials may be selected and tailored according to the material withinwhich the recess 160 is to be formed (e.g., dielectric layer 232).

Semiconductor manufacturing may typically employ a resist over at leasta portion of a surface to be etched. The resist may comprise aphotoresist, wherein photosensitive film is coated over a surface andphotochemically fixed or cured thereon. Wet etching may be commonly usedfor forming a desired topography in an oxide material, wherein a typicaletchant may include hydrofluoric acid, ammonium fluoride, or a mixturethereof. Alternatively, a typical dry etching process may utilizefluorine atoms (e.g., generated in a discharge of nitrogen trifluoride)to etch silicon. It may be appreciated that many different etchantvariations and process environments are known in the art for etching asubstrate of a given material or materials.

Accordingly, a resist and etch process may be performed wherein a resistlayer (not shown) may be formed over a portion of the upper surface 236of dielectric layer 232. Then, the portion of the exposed dielectriclayer 232 may be removed to expose a portion of conductive layer 234 by,for instance, an etching process to form recess 160, as shown in FIG.2C. Subsequent to etching, resist layer (not shown) may be removed(stripped). Etching recess 160 into dielectric layer 232 may cause theside walls 240 defining recess 160 to exhibit a taper. Such behavior maybe predictable or alterable based on the material comprising dielectriclayer 232 and the thickness, labeled “t” thereof, the type of etchingperformed, and other characteristics of the process. Therefore, thedimensions of the recess 160 may be controllable, predictable, or both.Generally, chemical etching may be utilized to form a recess 160 havingdimensional tolerances relating to the width W and length L (FIG. 2F),without respect to any taper, of about ±20 μm.

Alternatively, recess 160 may be formed by way of laser ablation. Asknown in the art, a laser beam may be directed toward the upper surface236 of interposer 230, to ablate portions of dielectric layer 232 toform a recess 160 having selected dimensions. As shown in FIG. 2D, theside walls 240 of recess 160 may exhibit a slight taper and may alsoinclude a radius or fillet 241 proximate the conductive layer 234. Suchcharacteristics may be predictable or alterable and, therefore, may beconsidered with respect to the dimensions of recess 160. Generally,laser ablation may be utilized to form a recess 160 having dimensionaltolerances relating to the width W and length L (FIG. 2F), withoutrespect to any taper, of about ±5 μm.

In another alternative, as shown in FIG. 2E, recess 160 may be formed byway of mechanical punching. As known in the art, a punch (not shown) andcorresponding die (not shown) may be positioned adjacent and abuttingupper surface 236 and lower surface 238 of interposer 230, respectively.Of course, the punch and die may be sized and configured for forming anaperture of selected dimensions, as known in the art. Subsequent topositioning a punch and die adjacent and abutting upper surface 236 andlower surface 238 of interposer 230, force may be applied to bias thepunch and corresponding die toward one another, ultimately causing thepunch to pass through the interposer 230 disposed therebetween, to formrecess 160 having selected dimensions for forming a passive elementhaving at least one intended electrical property.

Of course, the recess 160 may be punched through dielectric layer 232prior to formation or affixation of conductive layer 234. Alternatively,recess 160 may be punched through both dielectric layer 232 andconductive layer 234. Then, an additional conductive layer (not shown)may be affixed or formed along the lower surface 238 of the interposer230. Generally, punching processes may be utilized to form a recess 160having dimensional tolerances relating to the width W and length L (FIG.2F), without respect to thickness “t,” of about ±20 μm.

In another alternative, still referring to FIG. 2E, recess 160 may beformed by way of machining. More particularly, recess 160 may be formedby way of drilling or milling. As known in the art, a machining tool,such as, for instance, a drill bit or milling bit may be rotated atrelatively high speeds and plunged or moved into the interposer 230 to adepth corresponding to “t.” Alternatively, a drill bit or milling bitmay be rotated at relatively high speeds and plunged or moved throughthe thickness of dielectric layer 232 and conductive layer 234 may beaffixed or formed thereon subsequent to the machining of recess 160. Ofcourse, the machining tool may be sized and configured and its machiningpath may be selected for forming a cavity of selected dimensions forforming a passive element having at least one intended electricalproperty.

Recess 160 may be machined through dielectric layer 232 at least toconductive layer 234. Alternatively, recess 160 may be machined throughboth dielectric layer 232 and conductive layer 234. Then, an additionalconductive layer (not shown) may be affixed or formed along the lowersurface 238 of the interposer 230. Generally, machining processes may beutilized to form a recess 160 having dimensional tolerances relating tothe lateral dimensions (FIG. 2F), without respect to thickness “t,” ofabout ±30 μm.

FIG. 2F shows recess 160 formed into interposer 230 in a top elevationview. The shape of lateral dimensions of recess 160 may be generallyrectangular, having a width W and a length L, as shown in FIG. 2F.Alternatively, recess 160 may be generally circular, generally square,generally triangular, generally oval, generally polygonal, or asotherwise desired or known in the art.

Of course, a recess for forming a passive element according to thepresent invention may comprise any suitable or desirable geometry. Forexample, the portion of recess 161, as shown in FIG. 2G in a sidecross-sectional view of interposer 233, formed within dielectric layer232 may include a substantially uniform region 163 and a tapered region165. Also, as shown in FIG. 2G, a portion of recess 161 may be formed byconductive layer 234 and dielectric layer 235. The regions 163 and 165of resess 161 may each be formed by different processes, as describedabove, by the same process (e.g., laser ablation) or as otherwise knownin the art. Such a configuration may provide a greater surface area ofthe passive element (not shown) at the upper surface 236 of theinterposer 233. Additionally or alternatively, such a configuration mayprovide different regions 163 and 165 of recess 161 which are sized andconfigured for exhibiting different electrical properties.

Once a recess according to the present invention (recess 160 will bereferred to hereinbelow for simplicity) has been formed, the presentinvention contemplates that electrically conductive material may be atleast partially deposited therein. Generally, electrically conductivematerial may be at least partially deposited within recess 160mechanically. Explaining further, processes which move, push, spray, orforce electrically conductive material into recess 160 may be utilized.In one example, a screen-printing process may be performed fordepositing a paste, or ink, within the recess 160 formed in theinterposer 230 in order to form a passive element according to thepresent invention.

As described in further detail hereinbelow, a squeegee may be used toforce a paste or ink through openings in a screen or stencil into acavity formed within a substrate. The screen or stencil may be typicallyconstructed of stainless steel, and may have a predefined pattern thatdetermines the placement of the paste on the substrate. The pastescommonly used in screen-printing processes usually include an organicvehicle, glass frit, and active materials, such as dielectric materialsfor insulating films, elemental metals or alloys for conductor films, orsemiconductor compounds or alloys for resistor films. For instance,screen-printing paste may comprise carbon or silver-filled epoxy pastes.Commercially available pastes for use in screen-printing processes areavailable from Asahi Chemical of Tokyo, Japan. In a particular example,so-called polymer thick-film (“PTF”) pastes may be used.

A screen-printing process of the present invention is depicted in FIGS.3A-3D, which illustrate, respectively, a screen-printing apparatus andmethod. Of course, other screen-printing apparatus as known in the artmay be utilized in accordance with the present invention, withoutlimitation. Squeegee assembly 310 may include a movable head 320 and ablade 322 secured thereto and projecting downward therefrom. The blade322 may be typically molded from neoprene or polyurethane, or anotherresilient material, and may have a cross-sectional profile generally asillustrated or as otherwise known in the art. The lower end of blade 322may matingly engage the surface 344 of stencil 340 and a quantity ofpaste 324 may be provided thereon.

As the blade 322 moves laterally across the stencil 340, paste 324 maypass through at least one aperture 342 formed therein and may bedeposited therein and into recess 160. A side wall (not labeled) of atleast one aperture 342 of stencil 340 may be tapered, or may beconfigured as otherwise known in the art. Stencil 340 may be disposedupon the upper surface 236 of interposer 230 as the blade 322 translatestherealong, or alternatively, stencil 340 may be disposed slightlythereabove, as known in the art.

Subsequent to depositing paste 324 at least partially within recess 160,stencil 340 may be removed from adjacent the upper surface 236 ofinterposer 230. As shown in FIG. 3C, paste 324 may extend from recess160 above the upper surface 236 of interposer 230. Therefore,optionally, blade 322 or another leveling apparatus may be employed toplanarize or level the upper surface of the paste 324 disposed withinrecess 160 to form initial upper surface 327, as shown in FIG. 3D. Putanother way, the upper surface of paste 324 may be leveled so as toexhibit an upper surface topography which is substantially coplanar withthe upper surface 236 of interposer 230. Of course, alternatively, paste324 may remain extending from recess 160 above the upper surface 236 ofinterposer 230 if desired.

In an alternative process for depositing paste 324 within recess 160, asillustrated in FIGS. 3E and 3F, the present invention contemplates thatconductive paste 324 may be deposited at least partially within recess160 by providing the upper surface 236 of interposer 230 with a quantityof paste 324 and moving the blade 322 laterally thereacross.Accordingly, paste 324 may pass into recess 160 formed within theinterposer 230 without utilizing a stencil 340 (FIGS. 3A and 3B). Such aprocess may reduce the complexity or length of time required tofabricate an interposer 230 of the present invention.

Optionally, in combination with the above-described processes or otherprocesses as known in the art for depositing paste 324 within recess160, paste 324 may be vibrated for promoting uniform filling of recess160 therewith, or for promoting the distribution of paste substantiallytransverse to the direction of an earthly gravitational field. Forinstance, the present invention contemplates that vibration may becommunicated indirectly to the paste 324 by vibrating the interposer230, the squeegee assembly 310, or a combination thereof. Also, paste324 may be vibrated during disposition thereof within recess 160,thereafter, or both during and after screen printing of paste 324 withinrecess 160. In addition, although FIG. 3G shows paste 324 as beingdeposited within recess 160, vibrational energy may be communicated tothe paste 324 during any of the above-described screen-printingprocesses, intermittently, or as desired, without limitation.

As shown in FIG. 3G, a vibration system 330 may be structurally coupledto the interposer 230, the squeegee assembly 310, or both. In moredetail, vibration system 330 may include vibration generator 333, whichmay comprise a motor configured for rotating a mass having a center ofmass which is positioned eccentrically with respect to the rotationalaxis of the motor, which is structurally coupled to the interposer 230,the squeegee assembly 310, or both via transmission element 332.Vibration of the paste 324 may be desirable for facilitating uniform orcomplete filling of recess 160 therewith. Of course, vibration may begenerated by any method known in the art, such as, for instance,mechanical vibration or acoustic vibration, without limitation.

Referring now to FIGS. 3H and 3I, an alternative method of depositingconductive paste 324 at least partially within recess 160 is described.As shown in FIG. 3H, paste 324 may be deposited by injection system 348,which is configured for positioning injection needle 350 proximaterecess 160 and injection paste 324 therethrough and at least partiallywithin recess 160. Injection system 348 may comprise a so-called“pick-and-place” system, which includes an injection system forexpelling from the injection tip 351 of injection needle 350 a selectedamount or quantity of paste 324. Vibration may also be advantageous fordistributing paste 324 within the lower portion of recess 160 or,alternatively or additionally, paste 324 may be distributed to form apassive element 40 having a substantially constant thickness, as shownin FIG. 3I, by way of heating. Subsequently, passive element 40 may beat least partially cured and, optionally, dried to form a relativelyelectrically stable material.

In another aspect of the present invention, conductive material may bedeposited within a portion of recess 160 by way of so-called masklessmesoscale materials deposition (“M³D”). For instance, a material may beaerosolized by using an ultrasonic transducer or a pneumatic nebulizer.Then, the aerosol stream may be focused using a flow guidance depositionhead, which forms an annular, coaxial flow between the aerosol streamand a sheath gas stream. Further, patterning may be accomplished bymoving the substrate or deposition head relative to one another. Thedeposited material may be heated to form a substantially denseelectrically conductive material. For instance, the deposited materialmay be heated in an oven or by exposure to a laser beam. In addition,conductive traces extending to or from a passive element of the presentinvention may be formed by way of maskless mesoscale materialsdeposition. Commercially available maskless mesoscale materialsdeposition apparatus are produced by Optomec of Albuquerque, N. Mex.

The present invention also encompasses that a recess 160 may include aplurality of conductive layers. For instance, as shown in FIG. 3J,passive element 40 formed within interposer 230 may comprise a firstconductive layer 41 and a second conductive layer 43. Of course, firstconductive layer 41 and second conductive layer 43 may exhibit differentelectrical properties. Further, at least one characteristic relating toan electrical property of the second conductive layer 43 may be selectedfor influencing an electrical property of the passive element 40.Explaining further, a first conductive layer 41 may be formed withinrecess 160 and at least one electrical property thereof may be measured.Further, at least one characteristic relating to an electrical propertyof the second conductive layer 43 may be selected, prior to formation ofsecond conductive layer 43, for influencing an electrical property ofthe passive element 40. Such a configuration may provide a process bywhich an electrical property of the passive element 40 may be “tuned” oradjusted, toward a desired magnitude of the electrical property, as thepassive element 40 is formed. Of course, more than two conductive layersmay comprise passive element 40, without limitation.

As shown in FIG. 4A, the topography of upper surface 325 of paste 324may be different than the initial upper surface 327 (as shown in FIG.3D) deposited within recess 160 in response to curing, drying, or both.However, the sides of the recess 160 prevent the paste 324 from slumpinglaterally. Also, shrinkage due to drying or curing may be predictable orvery small. Therefore, the electrical properties of the passive element40 formed within recess 160 may be substantially determined by thedimensions thereof. Of course, a substantially planar upper surface 325of paste 324 may be formed by planarizing (i.e., lapping or grinding)the dielectric layer 232 and the post-fired paste 324. Alternatively,additional layers of paste 324 may be formed onto post-fired paste 324to reduce the variation of the topography of the upper surface 325thereof after drying or firing. Such a configuration may further refinethe accuracy or reproducibility with which at least one intendedelectrical property of a passive element may be exhibited.

It may be appreciated that since the sides of the recess 160 prevent thepaste 324 from slumping laterally, passive elements may be formed inrelatively close proximity to one another. As shown in FIG. 4B, passiveelements 40A and 40B may be separated by a distance X. For instance, ifrecesses forming passive elements 40A and 40B are each formed with alaser beam, distance X may be about 20 μm. Such a configuration may beadvantageous for providing relatively high electrical componentdensities within an interposer 230 of the present invention.

As described above, it may be desirable to provide for electricalcommunication with a passive element of the present invention.Generally, electrical communication may be provided through conductivetraces that extend along a surface of or vertically within theinterposer 230. Of course, bond pads, solder bumps or balls, or otherelectrical connection techniques as known in the art may be utilized toprovide electrical communication paths to a passive element.

In further detail, there may be many different configurations forelectrical communication with the at least one passive element 40. Forinstance, FIG. 4C shows a cross-sectional view of a passive element 40formed within interposer 230 wherein conductive traces 252 and 254 areformed upon at least a portion of the side walls 240 of the recess 160.Conductive traces 252 or 254 may be formed after recess 160 is formed byway of chemical vapor deposition, physical vapor deposition, atomiclayer deposition, sputtering, plating, or other deposition techniques asknown in the art. Of course, traces 252 and 254 may be patterned byresist and etch techniques on the surface of dielectric layer 232 asknown in the art and configured for electrical connection to otherelectrical devices. Further, one or more additional conductive layers256 may be provided along the upper or lower surface of dielectric layer232 for communicating electrically with passive element 40.

Alternatively, FIG. 4D shows a cross-sectional view of the passiveelement 40 formed within interposer 230 wherein conductive traces 258and 260 extend to respective portions of side wall 240 of passiveelement 40. Such a configuration may be provided by forming a laminatestructure of dielectric layer 232, a conductive layer forming theconductive trace 258, and a conductive layer forming the conductivetrace 260 prior to forming recess 160. Thus, the conductive layerforming the conductive trace 258 and the conductive layer forming theconductive trace 260 may at least partially overlap or be at leastpartially superimposed in relationship with the intended position ofrecess 160. Then, as shown in FIG. 4D, recess 160 may substantiallyperforate dielectric layer 232, the conductive layer forming theconductive trace 258, and conductive layer forming conductive trace 260.Such a configuration may allow for electrical communication with passiveelement 40 via conductive traces 258 and 260, which abut at least aportion of a side wall 240 of passive element 40.

In another alternative, FIG. 4E shows a cross-sectional view of thepassive element 40 formed within interposer 230 wherein the conductivetraces 258 and 260 laterally overlap or are superimposed with at least aportion of the passive element 40. In such a configuration, recess 160may be formed within the dielectric layer 232 prior to formation of theconductive traces 258 and 260. Then, the conductive layer forming theconductive trace 258 and, optionally, the conductive layer forming theconductive trace 260 may be formed or affixed to dielectric layer 232after the passive element 40 is formed. Alternatively, one or both ofconductive traces 258 and 260 may be formed prior to deposition of pastewithin recess 160. Thus, electrical communication with the passiveelement 40 may occur via conductive traces 258 and 260.

Furthermore, as shown in FIG. 5A, the at least one passive element 40may be sized and positioned within interposer 230 for providing selectedelectrical characteristics. For instance, as may be appreciated by theforegoing description, the passive element 40 may comprise a resistor408, an inductor 406, or a capacitor 410.

For instance, as shown in FIG. 5A, the resistor 408 may be sized andpositioned for providing a selected, intended magnitude of electricalresistance. Additionally, the resistor 408 may communicate electricallywith the conductive layer 234 by way of the conductive via 420, as knownin the art.

Alternatively, one or more passive elements 40 may be sized andpositioned to form a capacitor 410 for providing a selected magnitude ofelectrical capacitance. Capacitor 410 may comprise two conductiveregions, a storage node 416 and a cell plate 412, which are separated bya dielectric layer 414 (i.e., a plate-type capacitor). Further, thepresent invention contemplates that the dielectric layer 414 may beformed by a screen-printing process or as otherwise known in the art.More particularly, storage node 416, cell plate 412, and dielectriclayer 414 may be formed by sequentially partially filling a recess witha conductive material, a dielectric material, and another conductivematerial.

In further detail, capacitor 410 may be preferablymetal-dielectric-metal capacitor formed by depositing a pair of metallayers, a storage node 416 and a cell plate 412, which are separated bya dielectric layer 414. The storage node 416 and the cell plate 412 arepreferably formed of a metallic material and may have dimensionsselected in relation to a desired, anticipated electrical capacitance ofthe capacitor 410. The storage node 416 may be electrically connected toother passive elements (not shown) and solder connections (not shown)through conducting lines (not shown) disposed within the interposer 230.

The dielectric layer 414 may be a layer of oxide which is formed afterformation of the storage node 416. The dielectric layer 414 maycomprise, for example, silicon dioxide and may be formed by a chemicaldeposition process. Alternatively, the dielectric layer 414 may comprisea non-conductive paste, such as, for instance, an epoxy paste, and maybe screen printed or otherwise deposited, according to the presentinvention or as otherwise known in the art.

Further, one or more passive elements 40 may be sized and positioned toform an inductor 406 having a selected, intended magnitude of electricalinductance. Inductor 406 may comprise an inductor formed by screenprinting of a conductive layer in a generally spiral shape.Particularly, FIG. 5B shows a top view of inductor 406 comprising asubstantially uniform thickness trace, wherein the trace extends from agenerally interior position and spirals circumferentially about andradially outwardly therefrom. Configuring inductor 406 in a generallyspiral arrangement may allow for reduction in the overall size ofinductor 406, in comparison to a non-spiral inductor, which may reduceresistance in each inductor 406 and, therefore, may result in higher Qfactors thereof. To provide electrical contact to the inductors 406,conductive vias 420 may extend from inductor 406 to the conductive layer234.

Referring to FIG. 5A, the inductors 406, resistor 408, and capacitor 410of the interposer 230 may be electrically connected by conductor linesto conductive layer 234, which may be formed at varying points in theprocessing of interposer 230, as desired. Further, conductive layer 234may form a “bus” for connecting the inductors 406, resistor 408,capacitor 410, and any other electrical elements situated on or withinthe interposer 230.

In a further aspect of the present invention, although an interposer ofthe present invention is described above as including generally onedielectric layer and one conductive layer, the present invention is notso limited. Rather, an interposer of the present invention may includeat least one dielectric layer and at least one conductive layer, withoutlimitation. Accordingly, any number of conductive layers may be formedon or within any number of insulating layers as are desired for circuitconnection depending upon the placement of passive or active devicescomprising an interposer according to the present invention.

For instance, as shown in FIG. 5C, an interposer 430 of the presentinvention may include a plurality of dielectric layers 432A, 432B, and432C, which include passive elements 40A, 40B, 40C, and 40D,respectively. In addition, conductive layers 444, 446, 448, and 450 mayprovide electrical communication between passive elements 40A, 40B, 40C,and 40D, as well as to other electrical components or devices. Further,one or more conductive vias 452 may also provide electricalcommunication between passive elements 40A, 40B, 40C, and 40D, as wellas to other electrical components or devices. Thus, an interposer of thepresent invention may include at least one passive element formed atleast partially within at least one dielectric layer thereof.

In a further contemplation of the present invention, generally, at leastsome of the plurality of layers of a multilayer interposer of thepresent invention may include at least portions of one passive element.Put another way, at least some of the plurality of layers of amultilayer interposer of the present invention may include a recesswhich is formed according to the present invention, as describedhereinabove. Further, a passive element may provide at least one desiredor anticipated electrical property. Optionally, a passive element mayprovide more than one desired or anticipated electrical property.

For instance, FIG. 5D shows a top elevation view of a multilayerinterposer 550 according to the present invention including dielectriclayers 560, 562, 564, and 566, while FIG. 5E shows a schematic sideview, in the direction and area depicted by reference line A-A, ofmultilayer interposer 550. As shown in FIGS. 5D and 5E, passive element554 may comprise a generally spiral shape, as discussed above. However,passive element 554 may include a first portion 568 disposed withindielectric layer 560 and substantially coplanar with upper surface 556thereof, a second portion 570 disposed within dielectric layer 560, anda third portion 572 disposed within dielectric layer 564. Conductivevias 574 and 576 electrically connect first portion 568, second portion570, and third portion 572 to one another and conductive via 578 extendsthrough dielectric layer 566 to lower surface 557 thereof. Conductivevia 576 extends through both dielectric layers 562 and 564 and may beformed in separate pieces or as a monolithic member. Of course,conductive via 578 may be electrically connected to a conductive trace(not shown) for electrical communication with other devices (not shown).

It may be appreciated that passive element 554 may provide one or moreintended or desired electrical properties. For instance, as noted above,a spiral-shaped electrical conductor may provide a magnitude ofelectrical inductance. Further, first portion 568 and second portion 570are conductors separated by dielectric layer 560, and therefore, mayprovide a magnitude of electrical capacitance. Finally, of course,passive element 554 may provide a magnitude of electrical resistance.Summarizing, passive element 554 may be configured, sized, andpositioned to provide at least one anticipated or desired electricalproperty. Also, different passive elements (i.e., resistive, capacitive,or inductive) may be positioned within different layers, respectively,of a multilayer interposer.

For instance, FIGS. 5D and 5E illustrate passive elements 580 and 582,which are electrically connected to one another by way of conductive via584. Of course, optionally, a conductive trace (not shown) mayelectrically connect passive elements 580 and 582. Also, as shown inFIG. 5E, conductive via 586 extends between passive element 582 andlower surface 557 of dielectric layer 566. As shown in FIGS. 5D and 5E,passive elements 580 and 582 may be sized and positioned differentlyand, accordingly, may each exhibit at least one electrical propertywhich differs in relation to one another.

In yet another aspect of the invention, a wafer-scale interposersubstrate 531 comprising a plurality of wafer-scale interposers 530 maybe formed and operably coupled or assembled to a wafer 502 comprising aplurality of semiconductor dice or devices 505 to form wafer-scaleassembly 501, as shown in an exploded perspective view in FIG. 6A.Specifically, the wafer-scale interposer substrate 531 and wafer 502 maybe aligned with one another and abutted against one another and affixed,so as to provide electrical communication therebetween by way offlip-chip assembly methods or wire-bonding, as known in the art. Thatis, each plurality of semiconductor die or device 505 of wafer 502 maybe aligned with and electrically connected to a respective wafer-scaleinterposer 530 of wafer-scale interposer substrate 531. Subsequently,the wafer-scale assembly 501 may be singulated and, optionally,encapsulated to form a plurality of semiconductor device packages (e.g.,semiconductor device package 10 shown in FIG. 1) according to thepresent invention.

Alternatively, such a wafer-scale interposer substrate 531 may be dicedto form individual wafer-scale interposers 530 for use in theconstruction of a semiconductor device package (e.g., a semiconductordevice package 10 shown in FIG. 1) according to the present invention tosave time and production costs. Actual dicing of the wafer-scaleinterposer substrate 531 may occur at any stage of the processingthereof, such as, for example, after the wafer-scale interposersubstrate 531 is populated with passive circuits as described above orfollowing connection of wafer 502 thereto.

In yet a further alternative, a plurality of individual (singulated)semiconductor dice or devices 505 may be mounted upon the wafer-scaleinterposer substrate 531, as illustrated in FIG. 6B, which is a topelevation view of two individual semiconductor dice or devices 505mounted upon a wafer-scale interposer substrate 531 of the presentinvention. Subsequent to mounting of individual semiconductor die ordevice upon the wafer-scale interposers 530 of the wafer-scaleinterposer substrate 531, the assembly thereof may be singulated and,optionally, encapsulated to form a plurality of semiconductor devicepackages (e.g., a semiconductor device package 10 shown in FIG. 1)according to the present invention. Such a method and configuration mayprovide an opportunity for verification or testing of the semiconductordice prior to connection with the wafer-scale interposer substrate 531.

It is further noted that the above-described embodiments of aninterposer or a semiconductor device according to the present inventionmay be utilized in a computer or electronic environment. For example,FIG. 7 shows a schematic block diagram of system 630 according to thepresent invention. Semiconductor device 610, including at least oneinterposer 612 according to the present invention and at least onesemiconductor die 614, may include an electronic device 620, such as acomputing device, the electronic device 620 including a processor device632, such as a central processing unit or other logic device, operablycoupled thereto. Further, processor device 632 may also be coupled withone or more appropriate input devices 634 (e.g., mouse, push-button,touch screen, communication interface, hard drive, etc.) and one or moreoutput devices 636 (e.g., a display, printer, communication interface,hard drive, etc.) within system 630. It is also noted that thesemiconductor device 610 may be utilized in various computingenvironments, systems, and devices, such as, for example, cell phones,personal data assistants (PDAs), and other similar electronic devices.

While the present invention has been disclosed in terms of certainpreferred embodiments, those of ordinary skill in the art will recognizeand appreciate that the invention is not so limited. Additions,deletions, and modifications to the disclosed embodiments may beeffected without departing from the scope of the invention as claimedherein. Similarly, features from one embodiment may be combined withthose of another while remaining within the scope of the invention.

1. An interposer for assembly with a semiconductor die, comprising: asubstrate including at least one dielectric layer on a first sidethereof; at least one recess formed through the at least one dielectriclayer and the substrate; at least one passive element positioned atleast partially within the at least one recess formed through the atleast one dielectric layer and the substrate, at least one dimension ofthe at least one recess generating at least one electrical property ofthe at least one passive element during operation, the at least onepassive element comprising a plurality of conductive layers, each of theplurality of conductive layers exhibiting a different electricalproperty in relation to each of the other conductive layers of theplurality of conductive layers; at least one conductive layer extendingin a superimposed relationship along at least a portion of a surface ofthe at least one dielectric layer contacting a portion of the at leastone passive element; and at least one other conductive layer extendingin a superimposed relationship along another side of the substratecontacting a portion of the at least one passive element.
 2. Theinterposer of claim 1, wherein the at least one passive elementcomprises at least one of an inductor, a resistor, and a capacitor. 3.The interposer of claim 1, wherein the at least one recess exhibitslateral dimensional tolerances of about ±30 μm.
 4. The interposer ofclaim 1, wherein the at least one recess exhibits lateral dimensionaltolerances of about ±20 μm.
 5. The interposer of claim 1, wherein the atleast one recess exhibits lateral dimensional tolerances of about ±5 μm.6. The interposer of claim 1, wherein the at least one dielectric layeris substantially free of photopolymer.
 7. The interposer of claim 1,wherein a side wall of the at least one recess exhibits a taper.
 8. Theinterposer of claim 1, wherein the at least one passive elementcomprises a plurality of passive elements.
 9. The interposer of claim 1,wherein: the at least one passive element comprises two adjacent passiveelements; and the two adjacent passive elements are separated by adistance of about 20 μm.
 10. The interposer of claim 1, wherein: the atleast one dielectric layer comprises a plurality of dielectric layers;and the at least one passive element comprises a plurality of passiveelements.
 11. The interposer of claim 10, wherein at least two of theplurality of dielectric layers each includes one or more passiveelements of the plurality of passive elements.
 12. The interposer ofclaim 10, wherein the at least one passive element is positioned withinmore than one of the plurality of dielectric layers.
 13. The interposerof claim 10, further comprising at least one conductive via extendingfrom the at least one passive element.
 14. The interposer of claim 1,further comprising at least one conductive trace in electricalcommunication with the at least one passive element.
 15. The interposerof claim 14, wherein the at least one conductive trace defines at leasta portion of a side wall of the at least one recess.
 16. The interposerof claim 14, wherein the at least one conductive trace extends along atleast a portion of a side wall of the at least one recess.
 17. Theinterposer of claim 14, wherein the at least one conductive traceincludes at least a portion thereof superimposed in relationship to atleast a portion of the at least one passive element.
 18. The interposerof claim 1, wherein the at least one passive element comprises aconductive material positioned within only a portion of the at least onerecess.
 19. A wafer-scale interposer, comprising: a plurality ofinterposers, each comprising a substrate including at least onedielectric layer and at least one conductive layer on one side thereof;at least one recess formed through the at least one dielectric layer ofeach of the plurality of interposers, the at least one recess exhibitinglateral dimensional tolerances of about ±30 μm; and at least two layersof material forming at least one passive element positioned within theat least one recess formed through the at least one dielectric layer andthe substrate of the interposer, each of the plurality of interposersincludes at least one passive element positioned at least partiallywithin the at least one recess formed in the at least one dielectriclayer thereof, at least one dimension of the at least one recessproducing at least one electrical property of a passive element duringoperation.
 20. The wafer-scale interposer of claim 19, wherein the atleast one passive element comprises at least one of an inductor, aresistor, and a capacitor.
 21. A wafer-scale interposer, comprising: aplurality of interposers, each comprising a substrate including at leastone dielectric layer and at least one conductive layer on one sidethereof; at least one recess formed through the at least one dielectriclayer of each of the plurality of interposers, wherein the at least onerecess exhibits lateral dimensional tolerances of about ±20 μm; and atleast two layers of material forming at least one passive elementpositioned within the at least one recess formed through the at leastone dielectric layer and the substrate of the interposer, each of theplurality of interposers includes at least one passive elementpositioned at least partially within the at least one recess formed inthe at least one dielectric layer thereof, at least one dimension of theat least one recess producing at least one electrical property of apassive element during operation.
 22. A wafer-scale interposer,comprising: a plurality of interposers, each comprising a substrateincluding at least one dielectric layer and at least one conductivelayer on one side thereof; at least one recess formed through the atleast one dielectric layer of each of the plurality of interposers; atleast one recess formed through the at least one dielectric layer ofeach of the plurality of interposers, wherein the at least one recessexhibits lateral dimensional tolerances of about ±5 μm; and at least twolayers of material forming at least one passive element positionedwithin the at least one recess formed through the at least onedielectric layer and the substrate of the interposer, each of theplurality of interposers includes at least one passive elementpositioned at least partially within the at least one recess formed inthe at least one dielectric layer thereof, at least one dimension of theat least one recess producing at least one electrical property of apassive element during operation.
 23. The wafer-scale interposer ofclaim 19, wherein a side wall of the at least one recess exhibits ataper.
 24. The wafer-scale interposer of claim 19, wherein the at leastone passive element comprises a plurality of passive elements.
 25. Thewafer-scale interposer of claim 19, wherein: the at least one passiveelement comprises two adjacent passive elements; and the two adjacentpassive elements are separated by a distance of about 20 μm.
 26. Awafer-scale interposer, comprising: a plurality of interposers, eachcomprising a substrate including at least one dielectric layer and atleast one conductive layer on one side thereof; and at least one recesshaving a taper formed through the at least one dielectric layer andsubstrate of each of the plurality of interposers, each of the pluralityof interposers including at least one passive element formed of morethan one material positioned within the at least one recess formed inthe at least one dielectric layer thereof, respectively, the at leastone passive element comprising a plurality of conductive layers, atleast one dimension of the at least one recess selected for at least oneelectrical property of a passive element during operation, each of theplurality of conductive layers exhibiting a different electricalproperty in relation to each of the other conductive layer of theplurality of conductive layers.
 27. The wafer-scale interposer of claim26, wherein: the at least one dielectric layer comprises a plurality ofdielectric layers; and the at least one passive element comprises aplurality of passive elements.
 28. The wafer-scale interposer of claim27, wherein at least two of the plurality of dielectric layers eachinclude at least one passive element of the plurality of passiveelements.
 29. A wafer-scale interposer, comprising: a plurality ofinterposers, each comprising a substrate including at least onedielectric layer and at least one conductive layer on one side thereofand a conductive layer on the other side thereof; at least one recessformed through the at least one dielectric layer and the substrate ofeach of the plurality of interposers, each of the plurality ofinterposers including at least one passive element positioned at leastpartially within the at least one recess formed through the at least onedielectric layer, the at least one passive element comprising twoadjacent passive elements, the two adjacent passive elements separatedby a distance of about 20 μm, the substrate contacting the conductivelayer on the dielectric layer and the conductive layer on the other sideof the substrate, at least one dimension of the at least one recessselected for at least one electrical property of a passive elementpositioned during operation; and at least one conductive trace inelectrical communication with the at least one passive element.
 30. Thewafer-scale interposer of claim 29, wherein the at least one conductivetrace defines at least a portion of a side wall of the at least onerecess.
 31. The wafer-scale interposer of claim 29, wherein the at leastone conductive trace extends along at least a portion of a side wall ofthe at least one recess.
 32. The wafer-scale interposer of claim 29,wherein the at least one conductive trace includes at least a portionthereof superimposed in relationship to at least a portion of thepassive element.
 33. The interposer of claim 19, wherein the at leastone passive element comprises a conductive material positioned withinonly a portion of the at least one recess.
 34. A system, comprising: atleast one semiconductor package, comprising: an interposer comprising: asubstrate including at least one dielectric layer and a conductive layeron the at least one dielectric layer and a conductive layer on the otherside of the substrate; at least one recess formed through the at leastone dielectric layer and the substrate; at least one passive elementdisposed at least partially within the at least one recess formedthrough the at least one dielectric layer and the substrate, the atleast one passive element contacting the conductive layer on thedielectric layer and the conductive layer on the other side of thesubstrate, at least one dimension of the at least one recess selectedfor the at least one passive element for at least one electricalproperty, the at least one passive element comprising a plurality ofconductive layers, each of the plurality of conductive layers exhibitinga different electrical property in relation to each of the otherconductive layers of the plurality of conductive layers; and at leastone conductive layer extending in a superimposed relationship along atleast a portion of a surface of the at least one dielectric layer; and asemiconductor die operably connected to the interposer; and at least onemicroprocessor operably connected to the semiconductor package.
 35. Thesystem of claim 34, wherein the at least one passive element comprisesat least one of an inductor, a resistor, and a capacitor.
 36. The systemof claim 34, further comprising at least one of an input device and anoutput device.
 37. The system of claim 34, wherein the at least onesemiconductor package and the at least one microprocessor operablyconnected thereto comprise, at least in part, an electronic device.